View IXFB110N60P3_5067656.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Advance Technical Information
Polar3TM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFB110N60P3
VDSS ID25
RDS(on) trr
= =
600V 110A 56m 250ns
PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 600 600 30 40 110 275 55 3 35 1890 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 V V V V A A A J V/ns W C C C C C N/lb. g Advantages Easy to Mount Space Savings Features Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
G = Gate S = Source D = Drain Tab = Drain
G D S
Tab
Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 V V
200 nA 50 A 6 mA 56 m
VGS = 10V, ID = 0.5 * IDSS, Note 1
(c) 2011 IXYS CORPORATION, All Rights Reserved
DS100314(03/11)
IXFB110N60P3
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.13 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * IDSS Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * IDSS RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 55A, Note 1 Characteristic Values Min. Typ. Max. 65 105 18 1650 5.5 1.0 63 19 77 11 245 83 53 S nF pF pF ns ns ns ns nC nC nC 0.066 C/W C/W PLUS264TM (IXFB) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 55A, -di/dt = 100A/s VR = 100V, VGS = 0V 1.6 14.0 Characteristic Values Min. Typ. Max. 110 440 1.5 A A V
250 ns C A
Note
1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFB110N60P3
Fig. 1. Output Characteristics @ T J = 25C
220 100 VGS = 10V 8V 200 180 80 7V 160 7V VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ T J = 25C
ID - Amperes
60 6V 40
ID - Amperes
140 120 100 80 60 6V
20 5V 0 0 1 2 3 4 5 6
40 20 0 0 5 10 15 20 25 5V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
3.4 100 VGS = 10V 7V
Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature
VGS = 10V 3.0 2.6 I D = 110A 2.2 1.8 1.4 1.0 0.6 I D = 55A
6V
60
40 5V 20 4V 0 0 2 4 6 8 10 12 14
R DS(on) - Normalized
80
ID - Amperes
0.2 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current
3.0 VGS = 10V 2.6 TJ = 125C 100 120
Fig. 6. Maximum Drain Current vs. Case Temperature
R DS(on) - Normalized
ID - Amperes
TJ = 25C 0 20 40 60 80 100 120 140 160 180 200 220
2.2
80
1.8
60
1.4
40
1.0
20
0.6
0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXFB110N60P3
Fig. 7. Input Admittance
180 160 140 120 TJ = 125C 25C - 40C 200 180 160 140 25C TJ = - 40C
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
120 100 80 60 40 20 0 125C
100 80 60 40 20 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
0
20
40
60
80
100
120
140
160
180
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
160 140 120 7 10 9 8 VDS = 300V I D = 55A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
100 80 60 40
6 5 4 3 2 1 0 0 50 100 150 200 250
20 0
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 Ciss 1000
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit 10,000
Capacitance - PicoFarads
100
ID - Amperes
1,000
100s
Coss
100
10 10 Crss TJ = 150C TC = 25C Single Pulse 1 0 5 10 15 20 25 30 35 40 10 100 1,000 1ms
f = 1 MHz
1
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFB110N60P3
Fig. 13. Maximum Transient Thermal Impedance
0.1
Z (th)JC - C / W
0.01
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_110N60P3(K9)03-16-11

▲Up To Search▲

Price & Availability of IXFB110N60P3

	To Download IXFB110N60P3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .